SIGC144T170R2C edited by infineon technologies, ai m imm, l7361m, edition 2.1, 11.11.2009 igbt chip in npt-technology this chip is used for: ? chip only features: ? 1700v npt technology ? 280 m chip ? short circuit prove ? positive temperature coefficient ? easy paralleling applications: ? drives g c e chip type v ce i c die size package SIGC144T170R2C 1700v 75a 11.98 x 11.98 mm 2 sawn on foil mechanical parameter raster size 11.98 x 11.98 emitter pad size 8 x ( 2.98x1.98 ) gate pad size 1.48 x 0.757 area total 143.52 mm 2 thickness 280 m wafer size 150 mm max.possible chips per wafer 93 pcs passivation frontside photoimide pad metal 3200 nm alsicu backside metal ni ag ?system suitable for epoxy and soft solder die bonding die bond electrically conductive glue or solder wire bond al, <500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23c
SIGC144T170R2C edited by infineon technologies, ai m imm, l7361m, edition 2.1, 11.11.2009 maximum ratings parameter symbol value unit collector-emitter voltage, t vj =25 c v ce 1700 v dc collector current, limited by t vj max i c 1 ) a pulsed collector current, t p limited by t vj max i c,puls 225 a gate emitter voltage v ge 20 v junction temperature range t vj -55 ... +175 c operating junction temperature t vj -55...+150 c short circuit data 2 ) v ge = 15v, v cc = 1200v, t vj = 150c t sc 10 s reverse bias safe operating area 2 ) (rbsoa) i c,max = 150a, v ce,max = 1700v t vj 150c 1 ) depending on thermal properties of assembly 2 ) not subject to production test - verified by design/characterization static characteristic (tested on wafer), t vj =25 c value parameter symbol conditions min. typ. max. unit collector-emitter breakdown voltage v (br)ces v ge =0v , i c = 5 ma 1700 collector-emitter saturation voltage v cesat v ge =15v, i c =75a 2.2 2.7 3.2 gate-emitter threshold voltage v ge(th) i c =3.3ma , v ge = v ce 4.5 5.5 6.5 v zero gate voltage collector current i ces v ce =1700v , v ge =0v 18 a gate-emitter leakage current i ges v ce =0v , v ge =20v 480 na integrated gate resistor r g 5 ? dynamic characteristic (not subject to production test - verified by design / characterization), t vj =25 c value parameter symbol conditions min. typ. max. unit input capacitance c ies 5000 output capacitance c oes tbd reverse transfer capacitance c res v ce =25v, v ge =0v, f =1mhz tbd pf
SIGC144T170R2C edited by infineon technologies, ai m imm, l7361m, edition 2.1, 11.11.2009 further electrical characteristic switching characteristics and thermal properties are depending strongly on module design and mounting technology and can therefore not be specified for a bare die.
SIGC144T170R2C edited by infineon technologies, ai m imm, l7361m, edition 2.1, 11.11.2009 chip drawing e = emitter g = gate t = test pad do not contact e g t
SIGC144T170R2C edited by infineon technologies, ai m imm, l7361m, edition 2.1, 11.11.2009 description aql 0,65 for visual inspection according to failure catalogue electrostatic discharge sensitive device according to mil-std 883 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hint s given herein, any typical values stated herein and/or any information regarding the application of the devic e, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without lim itation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may co ntain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is re asonable to assume that the health of the user or other persons may be endangered.
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